View BLT82_473002.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

DISCRETE SEMICONDUCTORS
DATA SHEET
BLT82 UHF power transistor
Product specification 1996 Feb 05
Philips Semiconductors
Product specification
UHF power transistor
FEATURES * High efficiency * High gain * Internal pre-matched input. APPLICATIONS * Hand-held radio equipment in common emitter class-AB operation for 900 MHz Time Division Multiple Axis (TDMA) communication systems. PINNING - SOT96-1
1 4
MAM227 handbook, halfpage 8
BLT82
DESCRIPTION NPN silicon planar epitaxial transistor encapsulated in a plastic SOT96-1 (SO8) SMD package.
5 c b e
PIN 1, 8 2, 4, 5, 7 3, 6
SYMBOL b e c base
DESCRIPTION emitter collector
Fig.1 Simplified outline and symbol.
QUICK REFERENCE DATA RF performance at Ts 60 C in a common emitter test circuit (see Fig.5). MODE OF OPERATION f (MHz) 900 VCE (V) 6 PL (W) 3.5 2.8 Gp (dB) 8 typ. 10 9 C (%) 50 typ. 65 57
Pulsed, class-AB
1996 Feb 05
2
Philips Semiconductors
Product specification
UHF power transistor
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO VCEO VEBO IC Ptot Tstg Tj Note 1. Ts is the temperature at the soldering point of the collector pin. PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) total power dissipation storage temperature operating junction temperature Ts = 115 C; note 1 open base open collector CONDITIONS open emitter - - - - - -65 - MIN. MAX. 20 10 3.5 1 1.9 +150 175
BLT82
UNIT V V V A W C C
MGD207
handbook, halfpage
10
IC (A)
1
10-1 1 10 VCE (V)
102
Ts = 115 C.
Fig.2 DC SOAR.
1996 Feb 05
3
Philips Semiconductors
Product specification
UHF power transistor
BLT82
handbook, full pagewidth = 0.75
1
MGD208
Rth j-s (K/W)
0.50 0.33 0.20 0.10 0.05
10-1 0.02 0.01 0.00
P
=
tp T
tp T
t
10-2 10-5
10-4
10-3
10-2
10-1
tp (s)
1
Fig.3 Normalized thermal resistance as a function of pulse time.
THERMAL CHARACTERISTICS SYMBOL Rth j-s Note 1. Ts is the temperature at the soldering point of the collector pin. CHARACTERISTICS Tj = 25 C unless otherwise specified. SYMBOL V(BR)CBO V(BR)CEO V(BR)EBO ICES hFE Cc Cre PARAMETER collector-base breakdown voltage emitter-base breakdown voltage collector leakage current DC current gain collector capacitance feedback capacitance CONDITIONS open emitter; IC = 5 mA open collector; IE = 1 mA VCE = 6 V; VBE = 0 VCE = 5 V; IC = 100 mA VCE = 6 V; IC = 0; f = 1 MHz MIN. 20 10 3.5 - 30 - - - - - - 17 10 TYP. MAX. - - - 0.1 150 - - pF pF UNIT V V V mA PARAMETER thermal resistance from junction to soldering point CONDITIONS Ptot = 1.9 W; Ts = 115 C; note 1 VALUE 32 UNIT K/W
collector-emitter breakdown voltage open base; IC = 10 mA
VCB = 6 V; IE = ie = 0; f = 1 MHz -
1996 Feb 05
4
Philips Semiconductors
Product specification
UHF power transistor
APPLICATION INFORMATION RF performance at Ts 60 C in a common emitter test circuit (see notes 1, 2 and Fig.5). MODE OF OPERATION Pulsed, class-AB; = 1 : 8; tp 5 ms Notes 1. Ts is the temperature at the soldering point of the collector pin. 2. See also application report:. "G.S.M. Power Amplifier for 900 MHz at 6 V (no.: RNR-T45-95-T-246)" Ruggedness in class-AB operation The BLT82 is capable of withstanding load mismatches corresponding to: * VSWR = 6 : 1 through all phases under the following conditions: = 1 : 8; tp 5 ms; f = 900 MHz; VCE = 8.3 V; PL = 4 W. * VSWR = 10 : 1 through all phases under the following conditions: = 1 : 8; tp 5 ms; f = 900 MHz; VCE = 8.6 V; PL = 2.8 W. f (MHz) 900 VCE (V) 6 ICQ (mA) 2 PL (W) 3.5 2.8 Gp (dB) 8 typ. 10 9
BLT82
C (%) 50 typ. 65 57
MGD209
handbook, halfpage
16
80 VCE =5 V 6V C (%) 60 6V
Gp (dB) 12
Gp 8 C 4
5V 40
20
0 0 2 4 PL (W) 6
0
Pulsed, class-AB; f = 900 MHz; ICQ = 2 mA; tuned at PL = 3.5 W; Ts 60 C.
Fig.4
Power gain and collector efficiency as functions of load power; typical values.
1996 Feb 05
5
Philips Semiconductors
Product specification
UHF power transistor
Test circuit information
BLT82
handbook, full pagewidth
+Vbias
R1 +VS R3 C12 C15 L9 T1 C13 C14 R2 C16
L11
L8 input 50 C1 L1 C3 L2 C5 L3 L4
DUT L5 C6
L10 L6 C7
C9
L7
C11 C10
output 50
C2
C4
C8
MGD210
Fig.5 Common emitter test circuit for class-AB operation at 900 MHz.
1996 Feb 05
6
Philips Semiconductors
Product specification
UHF power transistor
List of components used in test circuit (see Figs 5 and 6) COMPONENT C1, C11 DESCRIPTION multilayer ceramic chip capacitor; note 1 multilayer ceramic chip capacitor; note 1 multilayer ceramic chip capacitor; note 1 multilayer ceramic chip capacitor; note 1 multilayer ceramic chip capacitor; note 1 multilayer ceramic chip cap.; note 2 multilayer ceramic chip cap.; note 1 multilayer ceramic chip cap.; note 2 electrolytic capacitor stripline; note 3 stripline; note 3 stripline; note 3 stripline; note 3 stripline; note 3 stripline; note 3 8 turns enamelled 1 mm copper wire grade 3B Ferroxcube wideband HF choke 4 turns enamelled 1 mm copper wire metal film resistor metal film resistor metal film resistor NPN transistor 35 nH 0.6 W, 38.3 0.6 W, 10 0.6 W, 1 BC817 internal dia. 3 mm leads 2 x 5 mm VALUE 62 pF 0.8 to 3.5 pF 1 pF 8.2 pF 6.2 pF 1.2 pF 10 nF 18 pF 39 nF 2200 F 50 50 50 50 50 50 80 nH length 20.6 mm width 5 mm length 27.4 mm width 5 mm length 4 mm width 5 mm length 5.8 mm width 5 mm length 12.4 mm width 5 mm length 36 mm width 5 mm internal dia. 3 mm leads 2 x 5 mm DIMENSIONS
BLT82
CATALOGUE No.
C2, C4, C8, C10 film dielectric trimmer C3 C5 C6, C7 C9 C12 C13, C14 C15 C16 L1 L2 L3, L4 L5 L6 L7 L8 L9, L11 L10 R1 R2 R3 T1 Notes
2222 809 05001
4132 020 36640
2322 156 13839 2322 156 11009 2322 156 11008
1. American Technical Ceramics type 100B or capacitor of same quality. 2. American Technical Ceramics type 200B or capacitor of same quality. 3. The striplines are on a double copper-clad printed-circuit board, with DUROID dielectric (r = 2.2); thickness 132"; thickness of the copper sheet 2 x 35 m. 1996 Feb 05 7
Philips Semiconductors
Product specification
UHF power transistor
BLT82
handbook, full pagewidth
140
77
copper foil
+Vbias R1 T1 R3 C12 L3 L1 C3 L2 C5 L3 L4 R2 L9 C14 C13 L10 C7 L6 C9 L5 C8 C6 L11 C15 C16
+VS
C1
L7
C11
C2
C4
C10
plated through holes fixing screws 6x
MGD211
Dimensions in mm. The components are situated on one side of the copper-clad PCB, the other side is unetched and serves as a ground plane. Earth connections from the component side to the ground plane are made by fixing screws, through metallization and copper straps around the board.
Fig.6 Printed-circuit board and component lay-out for 900 MHz class-AB test circuit in Fig.5.
1996 Feb 05
8
Philips Semiconductors
Product specification
UHF power transistor
BLT82
MGD212
MGD213
handbook, halfpage
10
handbook, halfpage
6
Zi () 8
ZL () 4 ri 6 2 4 xi 0 2
RL
XL
0 800
850
900
950
1000 f (MHz)
-2 800
850
900
950
1000 f (MHz)
VCE = 6 V; ICQ = 2 mA; PL = 3.5 W; Tamb = 25 C.
VCE = 6 V; ICQ = 2 mA; PL = 3.5 W; Tamb = 25 C.
Fig.7
Input impedance as a function of frequency (series components); typical values.
Fig.8
Load impedance as a function of frequency (series components); typical values.
MGD214
handbook, halfpage
12
handbook, halfpage
23.4
Gp (dB)
8
Zi 4
ZL ZS
0 800
850
900
950
f (MHz)
1000 Zi ZL
MGD215
VCE = 6 V; ICQ = 2 mA; PL = 3.5 W; Tamb = 25 C.
Dimensions in mm.
Fig.9
Power gain as a function of frequency; typical values.
Fig.10 SO8, RF test print and definition of transistor impedance.
1996 Feb 05
9
Philips Semiconductors
Product specification
UHF power transistor
PACKAGE OUTLINE
BLT82
handbook, full pagewidth
5.0 4.8
4.0 3.8
A
S
0.1 S
6.2 5.8
0.7 0.3
8
5 1.45 1.25
0.7 0.6
0.25 0.19
1.75 1.35
1 pin 1 index
4
0.25 0.10 detail A
1.0 0.5
0 to 8
o
MBC180 - 1
1.27
0.49 0.36
0.25 M (8x)
Dimensions in mm.
Fig.11 SOT96-1.
1996 Feb 05
10
Philips Semiconductors
Product specification
UHF power transistor
DEFINITIONS Data Sheet Status Objective specification Preliminary specification Product specification Limiting values
BLT82
This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications.
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.
1996 Feb 05
11

▲Up To Search▲

Price & Availability of BLT82

	To Download BLT82 Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .